讲授本科生必修课程电力电子器件与应用

承担教学改革项目-未央书院理工融合课《电力电子器件与应用》的新课程建设

2023-2026，多端口电力电子变压器解耦控制与振荡抑制研究，国家自然科学基金面上项目，中国

2021-2022, 兆瓦级多端口电力电子变压器，汇川技术，中国

2021-2022, IGBT功率模块可靠性评估，上海三菱电梯，中国

2021-2022, 75kW多功能三端口电力电子变压器，山东电科院，中国

2020-2021, 交直流混合的分布式可再生能源关键技术、核心装备和工程示范研究，国家重点研发计划（课题3），中国

2020-2023, SiC Based Modular Transformer-less MW-Scale Power Conditioning System and Control for Flexible Manufacturing Plants, Department of Energy, 美国

2018-2021, SiC based modular transformer-less MW-scale power conditioning system and control for flexible CHP system, Department of Energy, 美国

2017-2020, Multi-functional high-efficiency high-density medium voltage SiC based asynchronous microgrid power conditioning system module, Power America, 美国

2014-2017, Agile direct grid connection medium voltage 4.7-12.47 kV power converter for PV applications utilizing advanced WBG devices, Department of Energy, 美国

2016, Benchmark of Benefits of High Voltage SiC in Medium Voltage Power Distribution Grids, Oak Ridge National Laboratory, 美国

2016-2017, Topology Evaluation of Aircraft Electric Power Distribution System, Safran Company, 法国

国际期刊论文选

1)H. Li, Z. Gao, S. Ji, Y. Ma, F. Wang, “An inrush current limiting method for grid-connected converters considering grid voltage disturbances,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 2, pp. 2608-2618, Apr. 2022.

2)X. Huang, S. Ji, C. Nie, D. Li, M. Lin, L. Tolbert, F. Wang, W. Giewont, “Comprehensive analysis and improvement methods of noise immunity of desat protection for high voltage SiC MOSFETs with high dv/dt,” IEEE Open Journal of Power Electronics, vol. 3, pp. 36-50, Dec. 2021.

3)B. Shi, S. Ji, Z. Zhao, Z. Yu, “Discrete-State Event-Driven Numerical Prototyping of Megawatt Solid-State Transformers and AC/DC Hybrid Microgrids,” IEEE Access, vol. 9, pp. 108329-108339, Jul. 2021.

4)S. Ji, X. Huang, J. Palmer, F. Wang, L. Tolbert, “Modular multilevel converter (MMC) modeling considering submodule voltage sensor noise,” IEEE Trans. Power Electron., vol. 36, no. 2, pp. 1215-1219, Feb. 2021.

5)S. Ji, L. Zhang, X. Huang, J. Palmer, F. Wang, L. Tolbert, “A novel voltage balancing control with dv/dt reduction for 10-kV SiC MOSFET-based medium voltage modular multilevel converter,” IEEE Trans. Power Electron., vol. 35, no. 11, pp. 12533-12543, Nov. 2020.

6)L. Zhang, S. Ji, S. Gu, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Design considerations for high-voltage-insulated gate drive power supply for 10-kV SiC MOSFET applied in medium-voltage converter,” IEEE Trans. Ind. Electron., vol. 68, no. 7, pp. 5712-5724, Jul. 2021.

7)P. Yao, X. Jiang, P. Xue, S. Ji, F. Wang, “Flux balancing control of ungapped nanocrystalline core-based transformer in dual active bridge converters,” IEEE Trans. Power Electron., vol. 35, no. 11, pp. 11463-11474, Nov. 2020.

8)S. Ji, F. Wang, L. Tolbert, T. Lu, Z. Zhao, H. Yu, “An FPGA based voltage balancing control for multi HV-IGBTs in series connection,” IEEE Trans. on Ind. Appl., vol. 54, no. 5, pp. 4640-4649, Sep. 2018.

9)S. Ji, M. Laitinen, X. Huang, J. Sun, W. Giewont, F. Wang, L. Tolbert, “Short circuit characterization and protection of 10 kV SiC MOSFET,” IEEE Trans. Power Electron., vol. 34, no. 2, pp. 1755-1764, Feb. 2019.

10)B. Shi, Z. Zhao, K. Li, G. Feng, S. Ji, J. Zhou, “Design methodology for optimal phase-shift modulation of non-inverting buck-boost converter,” Journal of Power Electronics., vol. 19, no. 5, pp. 1108-1121, Sep. 2019.

11)S. Ji, S. Zheng, F. Wang, L. M. Tolbert, “Temperature-dependent characterization, modeling and switching speed limitation analysis of third generation 10 kV SiC MOSFET,” IEEE Trans. Power Electron., vol. 33, no. 5, pp. 4317-4327, May. 2018.

12)S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, “Series-connected HV-IGBTs using active voltage balancing control with status feedback circuit,” IEEE Trans. Power Electron., vol. 30, no. 8, pp. 4165-4174, Aug. 2015.

13)S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, S. Yang, C. Secrest, “Physical model analysis during transient for series connected HVIGBTs,” IEEE Trans. Power Electron., vol. 29, no. 11, pp. 5727-5737, Nov. 2014.

14)T. Lu, Z. Zhao, H. Yu, S. Ji, L. Yuan, F. He. “Parameter design of three-level converter based on series connected HV-IGBTs,” IEEE Trans. on Ind. Appl., vol. 50, no. 6, pp. 3943-3954, Nov. 2014.

15)T. Lu, Z. Zhao, S. Ji, H. Yu, L. Yuan. “Active clamping circuit with status feedback for series-connected HV-IGBTs,” IEEE Trans. on Ind. Appl., vol. 50, no. 5, pp. 3579-3590, Sep. 2014.

16)S. Ji, Z. Zhao, T. Lu, L. Yuan, H. Yu. “HVIGBT physical model analysis during transient,” IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2616-2624, May. 2013.

国际会议论文选

1)D. Li, X. Huang, S. Ji, C. Nie, F. Wang, L. Tolbert, “Controller design and implementation of a medium voltage (13.8 kV) modular multi-level converter for asynchronous microgrids,” IEEE Energy Conversion Congress and Exposition (ECCE), 2020, Detroit, MI.

2)X. Huang, S. Ji, D. LI, C. Nie, L. Tolbert, F. Wang, W. Giewont, “Analysis and gate driver design considerations of 10 kV SiC MOSFETs under flashover fault due to insulation failure,” IEEE Energy Conversion Congress and Exposition (ECCE), 2020, Detroit, MI.

3)X. Huang, S. Ji, D. Li, C. Nie, W. Giewont, L. Tolbert, F. Wang, “A test scheme for the comprehensive qualification of MMC submodule based on 10 kV SiC MOSFETs under high dv/dt,” European Conference on Power Electronics and Applications (EPE), 2020, Lyon, France.

4)S. Ji, J. Palmer, X. Huang, D. Li, W. Giewont, L. Tolbert, F. Wang, “Impact of submodule voltage sensor noise in 10 kV SiC MOSFET modular multilevel converters (MMCs) under high dv/dt environment,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 1089-1093.

5)D. Li, S. Ji, X. Huang, J. Palmer, F. Wang, L. Tolbert, “Controller development of an asynchronous microgrid power conditioning system (PCS) converter considering grid requirements,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 616-621.

6)J. Palmer, S. Ji, X. Huang, L. Zhang, W. Giewont, F. Wang, L. Tolbert, “Improving voltage sensor noise immunity in a high voltage and high dv/dt environment,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 107-113.

7)X. Huang, S. Ji, J. Palmer, L. Zhang, D. Li, F. Wang, L. Tolbert, W. Giewont, “A robust 10 kV SiC MOSFET gate driver with fast overcurrent protection demonstrated in a MMC submodule,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 1813-1820.

8)S. Ji, X. Huang, J. Palmer, L. Zhang, W. Giewont, F. Wang, L. Tolbert, “Medium Voltage (13.8 kV) Transformer-less Grid-Connected DC/AC Converter Design and Demonstration Using 10 kV SiC MOSFET with High Frequency,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1953-1959.

9)J. Palmer, S. Ji, X. Huang, L. Zhang, F. Wang, W. Giewont, L. Tolbert, “Testing and validation of 10 kV SiC MOSFET based 35 kVA MMC phase-leg for medium voltage (13.8 kV) grid,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 2001-2006.

10)X. Huang, J. Palmer, S. Ji, L. Zhang, F. Wang, L. Tolbert, W. Giewont, “Design and testing of a modular multilevel converter submodule based on 10 kV SiC MOSFETs,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1926-1933.

11)L. Zhang, S. Ji, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Multiple-step commutation scheme for avoiding high dv/dt in modular multilevel converter with 10 kV SiC MOSFET,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1968-1973.

12)L. Zhang, S. Ji, S. Gu, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Design considerations of high-voltage-insulation gate driver power supply for 10 kV SiC MOSFET in medium-voltage application,” in IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Anaheim, CA, pp. 425-430.

13)X. Huang, S. Ji, J. Palmer, L. Zhang, L. Tolbert, F. Wang, “Parasitic capacitor’s impact on switching performance in a 10 kV SiC MOSFET based converter,” IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, Atlanta, GA, pp. 311-318.

14)X. Huang, S. Ji, J. Sun, S. Zheng, F. Wang, L. Tolbert, M. Laitinen, W. Giewont, “Impact of Body Diode and Anti-parallel J B S Diode on Switching Performance of 3rd Generation 10 kV SiC MOSFET,” IEEE Energy Conversion Congress and Exposition (ECCE), 2018, Portland, OR, pp. 1887-1894.

15)S. Ji, M. Laitinen, X. Huang, J. Sun, W. Giewont, L. Tolbert, F. Wang, “Short circuit characterization of 3rd generation 10 kV SiC MOSFET,” in IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, 2018.

16)S. Ji, X. Shi, Z. Zhang, W. Cao, F. Wang, “Benefits of high voltage SiC applications in medium voltage power distribution grids,” in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington, D.C., 2017.

学术组织任职

IEEE Senior Member

IEEE PELS会员

IEEE ITRW成员

中国机械工业教育协会学科专业教学委员会委员

中国电源学会会员发展工作委员会委员

中国电源学会电磁兼容专业委员会委员

国际期刊编委

CPSS Transactions on Power Electronics and Applications客座编辑

Engineering Reports编辑

I-Energy编辑

国际会议任职

IEEE ECCE-Asia 2020技术委员会委员、分会场主席

IEEE Wipda-Asia 2021技术委员会委员、分会场主席