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Title: Unlock the potential of wide band gap power electronics

Reporter: Dr. Teng long, lecturer, Cambridge University

Invited by: Associate Professor Zhao Biao

Time: 15:00-16:30, September 16 (Thursday)

Location: Room 102, zone 3, West Main Building

Wide Band Gap (WBG) devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have been widely considered as the next generation of power semiconductors. However, to unlock the full potential of SiC and GaN devices, design of power converters principles need to be revisited and modified. In this talk will give introduction of selected novel technologies in switching modulation, magnetic components, and converter integration which transfer the advantageous physical properties of WBG devices into high efficiency and high power density energy conversion.

Dr Teng Long has been appointed Lecturer at the University of Cambridge in 2016. He established the Applied Power Electronics Laboratory (The Long Group) and he is currently leading a research team comprised of 3 Postdoctoral Research Associates and 8 PhD students. His research portfolio covers from power electronic devices to power converters to drive and power systems, mainly for transport electrification and renewable energy applications. Since his Lectureship, Dr Long has been awarded more than £2.5 million research grants where half are funded by the UK government and the rest directly from industrial sponsors. Dr Long has built strong connections with industrial partners including the SAIC Motor, Dynex Semiconductor, STMicroelectronics, Siemens, CBMM, CRRC, Wuxi SES, Huawei, NIO, etc.

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